Total Ionizing Dose Assessment of a Commercial 200V PMOSFET

IEEE Nuclear & Space Radiation Effects Conference (NSREC)

Abstract

Total ionizing dose testing of commercial 200 V PMOSFETs. At 100 kRad(Si), observed VT increase of ~ 3 V for biased ON devices and increase of ~ 1 V for biased OFF devices. The RDS_ON did not degrade with dose.

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