IEEE Nuclear & Space Radiation Effects Conference (NSREC)
Total ionizing dose testing of commercial 200 V PMOSFETs. At 100 kRad(Si), observed VT increase of ~ 3 V for biased ON devices and increase of ~ 1 V for biased OFF devices. The RDS_ON did not degrade with dose.
Donglai Xiang, Timur Bagautdinov, Tuur Stuyck, Fabian Prada, Javier Romero, Weipeng Xu, Shunsuke Saito, Jingfan Guo, Breannan Smith, Takaaki Shiratori, Yaser Sheikh, Jessica Hodgins, Chenglei Wu
Ludwig Sidenmark, Mark Parent, Chi-Hao Wu, Joannes Chan, Michael Glueck, Daniel Wigdor, Tovi Grossman, Marcello Giordano
Xingyi Zhou, Rohit Girdhar, Armand Joulin, Philipp Krähenbühl, Ishan Misra
