Popularity Prediction for Social Media over Arbitrary Time Horizons
Daniel Haimovich, Dima Karamshuk, Thomas Leeper, Evgeniy Riabenko, Milan Vojnovic
Assessment of Proton Radiation Effects on Hamamatsu InGaAs PIN Photodiodes and Simulated Radiation Responses Using Defect-Based TCAD Modeling
RADiations Effects on Components and Systems (RADECS)
Abstract
Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of 2.55×1011 p/cm2 . Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model was developed for use in mixed-mode simulation analyses.
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