RADiations Effects on Components and Systems (RADECS)
Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of 2.55×1011 p/cm2 . Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model was developed for use in mixed-mode simulation analyses.
Donglai Xiang, Timur Bagautdinov, Tuur Stuyck, Fabian Prada, Javier Romero, Weipeng Xu, Shunsuke Saito, Jingfan Guo, Breannan Smith, Takaaki Shiratori, Yaser Sheikh, Jessica Hodgins, Chenglei Wu
Ludwig Sidenmark, Mark Parent, Chi-Hao Wu, Joannes Chan, Michael Glueck, Daniel Wigdor, Tovi Grossman, Marcello Giordano
Xingyi Zhou, Rohit Girdhar, Armand Joulin, Philipp Krähenbühl, Ishan Misra
