Assessment of Proton Radiation Effects on Hamamatsu InGaAs PIN Photodiodes and Simulated Radiation Responses Using Defect-Based TCAD Modeling

RADiations Effects on Components and Systems (RADECS)


Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of 2.55×1011 p/cm2 . Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model was developed for use in mixed-mode simulation analyses.

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