2017 Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop
Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm2/mg and a saturated cross section of 2.2×10-4 cm2/device. The memory was not sensitive to SEL, SEU or MBUs.
Donglai Xiang, Timur Bagautdinov, Tuur Stuyck, Fabian Prada, Javier Romero, Weipeng Xu, Shunsuke Saito, Jingfan Guo, Breannan Smith, Takaaki Shiratori, Yaser Sheikh, Jessica Hodgins, Chenglei Wu
Ludwig Sidenmark, Mark Parent, Chi-Hao Wu, Joannes Chan, Michael Glueck, Daniel Wigdor, Tovi Grossman, Marcello Giordano
Xingyi Zhou, Rohit Girdhar, Armand Joulin, Philipp Krähenbühl, Ishan Misra
